BTS110E3045ANTMA1
MOSFET N-CH 100V 10A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies TEMPFET® BTS110E3045ANTMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 10A at 25°C (Tc). The on-state resistance (Rds On) is a maximum of 200mOhm at 5A and 10V. With a gate threshold voltage (Vgs(th)) of 3.5V (Max) at 1mA and input capacitance (Ciss) of 600pF (Max) at 25V, it offers efficient switching characteristics. The BTS110E3045ANTMA1 operates across a wide temperature range of -55°C to 150°C (TJ). It is supplied in a TO-220AB package and is available on a Tape & Reel (TR). This MOSFET is suitable for use in automotive and industrial power control systems.
Additional Information
Series: TEMPFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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