BSZ165N04NSGATMA1
MOSFET N-CH 40V 8.9A/31A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ165N04NSGATMA1 is an N-Channel power MOSFET with a 40V drain-source breakdown voltage. This device offers a continuous drain current of 8.9A at 25°C ambient temperature and 31A at 25°C case temperature, with a maximum power dissipation of 2.1W (Ta) and 25W (Tc). Key electrical characteristics include a low on-resistance of 16.5mOhm maximum at 20A and 10V gate-source voltage. The BSZ165N04NSGATMA1 features a gate charge of 10 nC maximum at 10V and an input capacitance of 840 pF maximum at 20V. It is packaged in a PG-TSDSON-8 (8-PowerTDFN) suitable for surface mounting and operates within a temperature range of -55°C to 150°C. This component is utilized in applications such as industrial power supplies, automotive systems, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 20 V |