BSZ12DN20NS3GATMA1
MOSFET N-CH 200V 11.3A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSZ12DN20NS3GATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 11.3 A at 25°C (Tc). Its low on-resistance (Rds On) is a maximum of 125 mOhm at 5.7 A and 10 V gate drive. The device offers a maximum power dissipation of 50 W (Tc) and is housed in a PG-TSDSON-8 package suitable for surface mounting. Key characteristics include a gate charge of 8.7 nC (Max) at 10 V and an input capacitance (Ciss) of 680 pF (Max) at 100 V. This MOSFET is designed for applications in power supply, motor control, and industrial automation.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
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