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BSZ120P03NS3EGATMA1

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BSZ120P03NS3EGATMA1

MOSFET P-CH 30V 11A/40A 8TSDSON

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ BSZ120P03NS3EGATMA1 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 11A at 25°C ambient and 40A at 25°C case temperature. The BSZ120P03NS3EGATMA1 exhibits a low on-resistance (Rds(on)) of 12mOhm maximum at 20A and 10V gate-source voltage. With a maximum power dissipation of 2.1W (Ta) and 52W (Tc), it is suitable for demanding power management tasks. Key electrical parameters include a gate charge (Qg) of 45 nC maximum at 10V and input capacitance (Ciss) of 3360 pF maximum at 15V. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in an 8-lead PG-TSDSON-8, this MOSFET is supplied on tape and reel, making it ideal for automated assembly in automotive, industrial, and consumer electronics power conversion systems.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id3.1V @ 73µA
Supplier Device PackagePG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3360 pF @ 15 V

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