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BSZ105N04NSGATMA1

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BSZ105N04NSGATMA1

MOSFET N-CH 40V 11A/40A 8TSDSON

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ BSZ105N04NSGATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 11A at 25°C ambient temperature, scaling to 40A at 25°C case temperature. The low on-resistance (Rds On) is specified at a maximum of 10.5mOhm at 20A and a gate-source voltage (Vgs) of 10V. With a maximum power dissipation of 2.1W (Ta) and 35W (Tc), it is suitable for thermal management in compact designs. Key parameters include a gate charge (Qg) of 17nC (max) at 10V and an input capacitance (Ciss) of 1300pF (max) at 20V. The BSZ105N04NSGATMA1 is housed in a PG-TSDSON-8 package, utilizing surface mount technology. This component finds use in automotive and industrial power management systems.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id4V @ 14µA
Supplier Device PackagePG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 20 V

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