BSZ0909LSATMA1
MOSFET N-CH 30V 19A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number BSZ0909LSATMA1, features a 30V drain-source voltage and a continuous drain current of 19A at 25°C ambient or 40A at 25°C case temperature. This device offers a low on-resistance of 3mOhm maximum at 20A and 10V Vgs. The PG-TDSON-8 FL package facilitates efficient heat dissipation for demanding applications. Key parameters include a gate charge of 26 nC maximum at 10V Vgs and an input capacitance of 1700 pF maximum at 15V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for power management, automotive, and industrial applications requiring high efficiency and robust performance.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |
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