BSZ0905PNSATMA1
MOSFET P-CH 30V 40A TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSZ0905PNSATMA1 is a P-Channel OptiMOS™ MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 40A at 25°C (Tc), with a maximum power dissipation of 69W (Ta). The BSZ0905PNSATMA1 exhibits a low on-resistance (Rds On) of 8.6mOhm at 20A and 10V, coupled with a gate charge (Qg) of 43.2 nC at 10V, facilitating efficient switching. It is housed in a PG-TDSON-8 package for surface mounting and operates within a temperature range of -55°C to 150°C. This device is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Ta) |
| Vgs(th) (Max) @ Id | 1.9V @ 105µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3190 pF @ 15 V |
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