BSZ0902NSIATMA1
MOSFET N-CH 30V 21A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ0902NSIATMA1 is a 30V N-Channel MOSFET in a PG-TSDSON-8-FL package. This device offers a continuous drain current of 21A at 25°C ambient temperature and 40A at 25°C case temperature. With a maximum Rds(on) of 2.8mOhm at 30A and 10V Vgs, it exhibits low conduction losses. The gate charge is 24 nC maximum at 10V Vgs, and input capacitance is 1500 pF maximum at 15V Vds. Power dissipation is rated at 2.5W ambient and 48W case. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in automotive, industrial power supplies, and motor control. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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