BSZ088N03MSGATMA1
MOSFET N-CH 30V 11A/40A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSZ088N03MSGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain to Source Voltage (Vdss) of 30 V and offers a continuous drain current capability of 11A at 25°C ambient temperature and 40A per package thermal density. With a low on-resistance (Rds On) of 8mOhm maximum at 20A and 10V Vgs, it achieves a maximum power dissipation of 2.1W (Ta) or 35W (Tc). The device supports a gate drive range from 4.5V to 10V, with a maximum Vgs of ±20V. Key electrical characteristics include a gate charge (Qg) of 27 nC maximum at 10V and an input capacitance (Ciss) of 2100 pF maximum at 15V. The PG-TSDSON-8 package facilitates surface mounting. This MOSFET is suitable for applications in automotive power management, industrial automation, and power conversion systems where efficient switching and low conduction losses are critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 15 V |
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