BSZ0804LSATMA1
MOSFET N-CH 100V 11A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSZ0804LSATMA1, an OptiMOS™ 5 series N-Channel Power MOSFET, offers a 100V drain-source voltage rating. This device features a low on-resistance of 9.6mOhm maximum at 20A and 10V Vgs. Continuous drain current is rated at 11A at ambient temperature and 40A at case temperature, with power dissipation capabilities of 2.1W (Ta) and 69W (Tc). The PG-TDSON-8 FL package is designed for surface mounting and is supplied on tape and reel. Key parameters include a maximum gate charge of 15 nC at 4.5V and input capacitance of 2100 pF at 50V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 36µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
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