BSZ0803LSATMA1
MOSFET N-CH 100V 9A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number BSZ0803LSATMA1. This device features a 100 V drain-source breakdown voltage and offers a continuous drain current of 9 A at ambient temperature (Ta) and 40 A at case temperature (Tc). The BSZ0803LSATMA1 exhibits a maximum on-resistance of 14.6 mOhm at 20 A and 10 V Vgs. Key parameters include a gate charge (Qg) of 15 nC at 10 V Vgs and input capacitance (Ciss) of 1300 pF at 50 V Vds. With a maximum power dissipation of 2.1 W (Ta) and 52 W (Tc), this MOSFET is suitable for applications in industrial and automotive sectors. The component is housed in an 8-PowerTDFN (PG-TDSON-8 FL) package and supplied on tape and reel. Operating temperature range is -55°C to 150°C.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 23µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
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