BSZ076N06NS3GATMA1
MOSFET N-CH 60V 20A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ076N06NS3GATMA1 is an N-channel Power MOSFET designed for high-performance applications. This component features a 60V drain-source voltage and a continuous drain current of 20A at 25°C (Tc). The device exhibits a low on-resistance of 7.6mOhm maximum at 20A and 10V gate-source voltage. Its PG-TSDSON-8 package (8-PowerVDFN) supports surface mounting and offers excellent thermal management with a maximum power dissipation of 69W at 25°C (Tc). Key parameters include a gate charge of 50nC (max) at 10V and input capacitance of 4000pF (max) at 30V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 30 V |