BSZ0704LSATMA1
MOSFET N-CH 60V 11A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ0704LSATMA1 is an N-Channel Power MOSFET designed for efficient power management. This component features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 11A at ambient temperature (Ta) and 40A at case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 9.9mOhm maximum at 20A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 2.1W (Ta) and 36W (Tc), it is suitable for demanding applications. The BSZ0704LSATMA1 utilizes the PG-TDSON-8 FL package for surface mounting, offering robust thermal performance. Key parameters include a gate charge (Qg) of 8.6 nC maximum at 4.5V and input capacitance (Ciss) of 1300 pF maximum at 30V. This MOSFET is commonly employed in automotive and industrial power supply applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 14µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 30 V |