BSZ0703LSATMA1
MOSFET N-CH 60V 40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ0703LSATMA1 is a 60V N-Channel MOSFET in a PG-TSDSON-8-26 package. This device features a low Rds(on) of 6.5mOhm at 20A and 10V Vgs, enabling efficient power switching. With a continuous drain current capability of 40A (Tc) and a power dissipation of 46W (Tc), it is suitable for high-current applications. The gate charge is specified at 13 nC (max) at 4.5V, and input capacitance is 1800 pF (max) at 30V. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly found in automotive, industrial power supplies, and motor control systems. The BSZ0703LSATMA1 is supplied in tape and reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 20µA |
| Supplier Device Package | PG-TSDSON-8-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 30 V |
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