BSZ0702LSATMA1
MOSFET N-CH 60V 17A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ0702LSATMA1 is a 60V N-Channel Power MOSFET in a PG-TDSON-8 FL package. This device features a low ON-resistance of 4mOhm at 20A and 10V, with continuous drain current ratings of 17A at 25°C ambient and 40A at 25°C case temperature. Power dissipation is rated at 2.1W ambient and 69W case. The gate charge is 22 nC maximum at 4.5V, and input capacitance is 3100 pF maximum at 30V. This MOSFET is suitable for applications requiring efficient power switching in automotive and industrial power management. Operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 36µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 30 V |
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