BSZ0602LSATMA1
MOSFET N-CH 80V 13A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series BSZ0602LSATMA1 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 13 A at 25°C ambient temperature, scaling to 40 A under typical case conditions. With a low on-resistance (Rds(on)) of 7 mOhm at 20 A and 10 V gate drive, it minimizes conduction losses. The BSZ0602LSATMA1 boasts a maximum power dissipation of 69 W at 25°C case temperature and is housed in a compact PG-TDSON-8 FL package, suitable for surface mounting. Key characteristics include a gate charge (Qg) of 18 nC at 4.5 V and input capacitance (Ciss) of 2340 pF at 40 V. This component is utilized in automotive, industrial, and consumer electronics where robust power switching is critical.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 36µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 40 V |
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