BSZ058N03MSGATMA1
MOSFET N-CH 30V 14A/40A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number BSZ058N03MSGATMA1. This device features a 30V drain-source voltage and a continuous drain current capability of 14A (at 25°C ambient) and 40A (at 25°C case temperature). With a maximum on-resistance of 5mOhm at 20A and 10V gate-source voltage, it offers low conduction losses. The MOSFET is designed for surface mounting within an 8-TSDSON package, providing efficient thermal dissipation with power dissipation ratings of 2.1W (ambient) and 45W (case). Key parameters include a gate charge of 40nC (max) at 10V and an input capacitance of 3100pF (max) at 15V. Operating temperature range is -55°C to 150°C. This component finds application in power management solutions across automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 15 V |
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