BSZ042N04NSGATMA1
MOSFET N-CH 40V 40A TSDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ042N04NSGATMA1 is an N-Channel Power MOSFET featuring 40V drain-source voltage and 40A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 4.2mOhm maximum at 20A and 10V Vgs. With a gate charge of 46nC maximum at 10V, it is suitable for high-efficiency switching applications. The MOSFET utilizes a PG-TSDSON-8 package for surface mounting, providing excellent thermal performance with a power dissipation of 69W at 25°C (Tc). Key parameters include 3700pF maximum input capacitance and a gate-source voltage range of ±20V. This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 36µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 20 V |
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