BSZ037N06LS5ATMA1
MOSFET N-CH 60V 18A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSZ037N06LS5ATMA1, an N-Channel Power MOSFET from the OptiMOS™ series. This device offers a 60V drain-source voltage (Vdss) and features a low on-resistance of 3.7mOhm at 20A and 10V gate-source voltage. It supports continuous drain currents of 18A at ambient temperature (Ta) and 40A at case temperature (Tc), with corresponding power dissipations of 2.1W (Ta) and 69W (Tc).
The BSZ037N06LS5ATMA1 utilizes advanced MOSFET technology and is housed in a PG-TSDSON-8-34 package for efficient thermal management. Key electrical characteristics include a maximum gate charge (Qg) of 47 nC at 10V and a maximum input capacitance (Ciss) of 3100 pF at 30V. The device is designed for surface mounting and operates across a wide temperature range of -55°C to 150°C (TJ). This component is suited for applications in automotive, industrial power supplies, and power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 36µA |
| Supplier Device Package | PG-TSDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 30 V |
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