BSZ035N03LSGATMA1
MOSFET N-CH 30V 20A/40A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ035N03LSGATMA1 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 20A at ambient temperature (Ta) and 40A at case temperature (Tc). With a low on-resistance (Rds On) of 3.5mOhm at 20A and 10V Vgs, it minimizes conduction losses. The BSZ035N03LSGATMA1 is housed in an 8-PowerTDFN (PG-TSDSON-8) package for efficient heat dissipation, supporting a maximum power dissipation of 2.1W (Ta) and 69W (Tc). Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 4400 pF at 15V. It operates across a temperature range of -55°C to 150°C. This MOSFET is well-suited for use in automotive, industrial, and consumer electronics power conversion circuits.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 15 V |
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