BSZ033NE2LS5ATMA1
MOSFET N-CH 25V 18A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSZ033NE2LS5ATMA1 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 25 V. This OptiMOS™ series component offers a continuous drain current of 18 A at ambient temperature (Ta) and 40 A at case temperature (Tc). The MOSFET features a low on-resistance of 3.3 mOhm at 20 A and 10 V Vgs, with a maximum gate charge of 18.3 nC at 10 V. Its input capacitance (Ciss) is a maximum of 1230 pF at 12 V.
The BSZ033NE2LS5ATMA1 is housed in a PG-TSDSON-8-FL package for surface mounting. It supports drive voltages ranging from 4.5 V to 10 V and has a maximum Vgs of ±16V. Power dissipation is rated at 2.1 W (Ta) and 30 W (Tc). This component is suitable for applications in automotive and industrial sectors, including power supply units and motor control. The operating temperature range is -55°C to 150°C (TJ). This part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 12 V |
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