BSZ025N04LSATMA1
MOSFET N-CH 40V 22A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ025N04LSATMA1 is an N-Channel power MOSFET featuring a 40V drain-source breakdown voltage. It offers a continuous drain current of 22A at 25°C ambient and 40A at 25°C case temperature. The device exhibits a low on-resistance of 2.5mOhm at 20A and 10V Vgs. With a maximum power dissipation of 2.1W ambient and 69W case, it is suitable for demanding applications. Key characteristics include a gate charge of 52 nC at 10V Vgs and input capacitance of 3680 pF at 20V Vds. This MOSFET is available in a PG-TSDSON-8-FL package, utilizing surface mount technology. It operates across a temperature range of -55°C to 150°C. This component finds utility in automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 20 V |
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