BSZ023N04LSATMA1
MOSFET N-CH 40V 22A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSZ023N04LSATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and offers continuous drain current ratings of 22A at ambient temperature (Ta) and 40A at case temperature (Tc). The BSZ023N04LSATMA1 exhibits a low on-resistance (Rds On) of 2.35mOhm at 20A and 10V gate-source voltage (Vgs). Its high power dissipation capabilities, 2.1W (Ta) and 69W (Tc), are supported by the PG-TSDSON-8-FL package, enabling efficient thermal management in surface mount designs. Key electrical parameters include a gate charge (Qg) of 37nC at 10V and input capacitance (Ciss) of 2630pF at 20V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial power, and power supply applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.35mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2630 pF @ 20 V |
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