BSZ018NE2LSIATMA1
MOSFET N-CH 25V 22A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series BSZ018NE2LSIATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a 25V drain-source breakdown voltage and offers a continuous drain current of 22A at ambient temperature (Ta) and 40A at case temperature (Tc). With a low on-resistance of 1.8mOhm at 20A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V and exhibits a maximum gate charge of 36 nC at 10V. Input capacitance (Ciss) is rated at 2500 pF at 12V. Power dissipation capabilities are 2.1W (Ta) and 69W (Tc). This component is housed in a PG-TSDSON-8-FL package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. It is supplied on tape and reel. Applications include power management, automotive, and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 12 V |
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