BSZ010NE2LS5ATMA1
MOSFET N-CH 25V 32A/40A TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number BSZ010NE2LS5ATMA1. This device features a 25V drain-source voltage and a continuous drain current capability of 32A at ambient temperature and 40A at case temperature. The low on-resistance is specified at 1mOhm maximum at 20A drain current and 10V gate-source voltage. Key parameters include a gate charge of 29nC at 4.5V Vgs and input capacitance of 3900pF at 12V Vds. Designed for surface mounting, this MOSFET is housed in a PG-TSDSON-8-34 package with tape and reel packaging. Maximum power dissipation is 2.1W (Ta) and 69W (Tc). The operating temperature range is -55°C to 150°C. Applications include automotive and industrial power management systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TSDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 12 V |
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