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BSV236SP L6327

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BSV236SP L6327

MOSFET P-CH 20V 1.5A SOT363-6

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Infineon Technologies BSV236SP-L6327 is a P-Channel OptiMOS™ MOSFET designed for efficient power management. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 1.5 A at 25°C, with a maximum power dissipation of 560 mW (Ta). The on-resistance (Rds On) is specified at a maximum of 175 mOhm at 1.5 A and 4.5 V gate-source voltage. Key parameters include a gate charge (Qg) of 5.7 nC at 4.5 V and input capacitance (Ciss) of 228 pF at 15 V. The MOSFET supports drive voltages between 2.5 V and 4.5 V, with a maximum gate-source voltage (Vgs) of ±12 V. The threshold voltage (Vgs(th)) is 1.2 V at 8 µA. Manufactured using advanced MOSFET technology, the BSV236SP-L6327 is housed in a compact PG-SOT363-PO (SOT-363-6) package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 150°C. This component is commonly utilized in automotive and industrial applications requiring high-efficiency switching. It is supplied in Tape & Reel packaging.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs175mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)560mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 8µA
Supplier Device PackagePG-SOT363-PO
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds228 pF @ 15 V

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