BSS87L6327HTSA1
MOSFET N-CH 240V 260MA SOT89Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSS87L6327HTSA1 is a SIPMOS® N-Channel MOSFET designed for surface mount applications. This device features a drain-source voltage (Vdss) of 240V and a continuous drain current (Id) of 260mA at 25°C (Ta). The on-resistance (Rds On) is a maximum of 6 Ohms at 260mA and 10V gate-source voltage. With a gate charge (Qg) of 5.5 nC maximum at 10V and input capacitance (Ciss) of 97 pF maximum at 25V, it offers efficient switching characteristics. The power dissipation is rated at 1W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this component is housed in a PG-SOT89 package and is supplied on tape and reel. Applications include power switching and general-purpose amplification in industrial and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 260mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Supplier Device Package | PG-SOT89 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 25 V |
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