BSS87H6327XTSA1
MOSFET N-CH 240V 260MA SOT89-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS™ N-Channel MOSFET, part number BSS87H6327XTSA1, is designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 240V and a continuous drain current (Id) of 260mA at 25°C. The Rds On is specified at a maximum of 6 Ohms at 260mA and 10V Vgs. Gate charge (Qg) is a maximum of 5.5 nC at 10V, and input capacitance (Ciss) is a maximum of 97 pF at 25V. The MOSFET operates within an extended temperature range of -55°C to 150°C. It is packaged in a PG-SOT89-4-2 (TO-243AA) surface mount configuration. This component is suitable for use in power management, industrial control, and automotive systems.
Additional Information
Series: SIPMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 260mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Supplier Device Package | PG-SOT89-4-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 25 V |
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