BSS87E6327T
MOSFET N-CH 240V 260MA SOT89-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BSS87E6327T is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 240V and a continuous drain current (Id) of 260mA at 25°C, with a maximum power dissipation of 1W. The device exhibits a low on-resistance (Rds On) of 6 Ohms at 260mA and 10V Vgs. Key parameters include a gate charge (Qg) of 5.5 nC at 10V and input capacitance (Ciss) of 97 pF at 25V. Operating across a temperature range of -55°C to 150°C, the BSS87E6327T is housed in a PG-SOT89-4-2 (TO-243AA) package, supplied on tape and reel. This MOSFET is suitable for use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 260mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Supplier Device Package | PG-SOT89-4-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 25 V |
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