BSS87E6327
MOSFET N-CH 240V 260MA SOT89-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® MOSFET, part number BSS87E6327, is an N-Channel device featuring a 240V Drain-Source Voltage (Vdss). This surface mount component, housed in a PG-SOT89-4-2 package (TO-243AA), offers a continuous drain current of 260mA (Ta) with a maximum power dissipation of 1W (Ta). Key electrical characteristics include a maximum Rds On of 6 Ohm at 260mA, 10V, and a gate charge of 5.5 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 260mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Supplier Device Package | PG-SOT89-4-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 25 V |
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