BSS84PW L6327
MOSFET P-CH 60V 150MA SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS84PW-L6327 is a P-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 150mA at 25°C. The on-resistance (Rds On) is a maximum of 8 Ohms at 150mA and 10V gate-source voltage. With a maximum power dissipation of 300mW, it operates across a temperature range of -55°C to 150°C. The package is PG-SOT323 (SC-70), supplied on tape and reel. Key electrical characteristics include a gate charge of 1.5 nC at 10V and input capacitance of 19.1 pF at 25V. This device is utilized in various industrial and consumer electronics applications requiring efficient switching and low power control.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19.1 pF @ 25 V |
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