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BSS84PW

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BSS84PW

MOSFET P-CH 60V 150MA SOT323-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BSS84PW is a P-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 150mA at 25°C. The device offers a maximum power dissipation of 300mW (Ta) and an Rds On of 8 Ohms at 150mA drain current and 10V gate-source voltage. Key characteristics include a Gate Charge (Qg) of 1.5 nC (Max) at 10V and an Input Capacitance (Ciss) of 19.1 pF (Max) at 25V. It operates within a temperature range of -55°C to 150°C and is supplied in a PG-SOT323 package, commonly known as SC-70. This MOSFET finds application in various electronics, including automotive and industrial control systems.

Additional Information

Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Rds On (Max) @ Id, Vgs8Ohm @ 150mA, 10V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Vgs(th) (Max) @ Id2V @ 20µA
Supplier Device PackagePG-SOT323
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds19.1 pF @ 25 V

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