BSS84PL6327HTSA1
MOSFET P-CH 60V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSS84PL6327HTSA1 is a P-Channel SIPMOS® MOSFET designed for high-reliability applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 170mA at 25°C. With a maximum power dissipation of 360mW (Ta) and a low on-resistance of 8 Ohms at 170mA and 10V drive, it offers efficient switching performance. The gate charge (Qg) is a maximum of 1.5 nC at 10V, and input capacitance (Ciss) is 19 pF at 25V. This MOSFET operates within a temperature range of -55°C to 150°C and is packaged in a PG-SOT23 (TO-236-3, SC-59) surface-mount configuration, supplied on tape and reel. It finds use in various industrial and consumer electronics sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
