BSS84PH6433XTMA1
MOSFET P-CH 60V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BSS84PH6433XTMA1 is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 170mA at 25°C. The Rds On is specified at a maximum of 8 Ohms when Id is 170mA and Vgs is 10V. Gate charge (Qg) is 1.5 nC maximum at 10V, and input capacitance (Ciss) is 19 pF maximum at 25V. Power dissipation is rated at 360mW (Ta). Packaged in a PG-SOT23 (TO-236-3, SC-59), this device operates from -55°C to 150°C. It is commonly utilized in industrial, automotive, and consumer electronics for switching and amplification applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19 pF @ 25 V |
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