BSS84P-E6327
MOSFET P-CH 60V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS84P-E6327 is a P-Channel SIPMOS® MOSFET designed for efficient switching applications. This component offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 170mA at 25°C, with a maximum power dissipation of 360mW. The Rds On is specified at a maximum of 8 Ohms when Id is 170mA and Vgs is 10V. It features a gate charge (Qg) of 1.5 nC maximum at 10V and input capacitance (Ciss) of 19 pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C and is housed in a PG-SOT23 package, suitable for surface mounting. This MOSFET is commonly utilized in industrial automation, consumer electronics, and power management circuits.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19 pF @ 25 V |
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