BSS83PL6327HTSA1
MOSFET P-CH 60V 330MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS83PL6327HTSA1 is a P-Channel SIPMOS® MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 330mA at 25°C. The Rds On is specified at a maximum of 2 Ohms when driven at 10V Vgs with 330mA Id. With a maximum power dissipation of 360mW (Ta), it is housed in a compact PG-SOT23 (TO-236-3, SC-59) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 3.57 nC and input capacitance of 78 pF. The operating temperature range is -55°C to 150°C. This device finds application in various industrial sectors, including consumer electronics and automotive systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 330mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 330mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 78 pF @ 25 V |
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