BSS816NW L6327
MOSFET N-CH 20V 1.4A SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' BSS816NW-L6327 is an N-Channel OptiMOS™ Power MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.4A at 25°C. With a maximum on-resistance (Rds On) of 160mOhm at 1.4A and 2.5V Vgs, it offers efficient power switching. The device boasts a low gate charge (Qg) of 0.6 nC at 2.5V and input capacitance (Ciss) of 180 pF at 10V, contributing to high switching speeds. Packaged in a compact PG-SOT323 (SC-70) surface-mount configuration, it dissipates up to 500mW (Ta). Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in consumer electronics, industrial automation, and automotive systems requiring robust power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 750mV @ 3.7µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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