BSS806NL6327HTSA1
MOSFET N-CH 20V 2.3A SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS806NL6327HTSA1 is an N-Channel OptiMOS™ MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 57mOhm at 2.3A and 2.5V gate-source voltage. Its low gate charge (Qg) of 1.7 nC at 2.5V Vgs and input capacitance (Ciss) of 529 pF at 10V Vds contribute to excellent switching performance. The BSS806NL6327HTSA1 is supplied in a PG-SOT23 package for surface mounting, with a maximum power dissipation of 500mW. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 750mV @ 11µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 10 V |
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