BSS7728NL6327HTSA1
MOSFET N-CH 60V 200MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSS7728NL6327HTSA1 SIPMOS® N-channel MOSFET. This surface-mount device features a 60V drain-source breakdown voltage and a continuous drain current of 200mA at 25°C. It has a maximum power dissipation of 360mW (Ta) and a low on-resistance of 5 Ohm at 500mA, 10V. Key parameters include a gate charge of 1.5 nC (max) at 10V and an input capacitance of 56pF (max) at 25V. The device operates over a temperature range of -55°C to 150°C (TJ) and is supplied in a PG-SOT23 package, delivered on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 26µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 56 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
