BSS670S2LL6327HTSA1
MOSFET N-CH 55V 540MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS670S2LL6327HTSA1 is an N-Channel OptiMOS™ Power MOSFET designed for power management applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 540mA at 25°C. The device exhibits a maximum on-resistance (Rds On) of 650mOhm at 270mA and 10V gate-source voltage. With a gate charge (Qg) of 2.26nC and input capacitance (Ciss) of 75pF, it offers efficient switching characteristics. The BSS670S2LL6327HTSA1 is housed in a PG-SOT23 package for surface mounting and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 540mA (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 270mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 2.7µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V |
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