BSS340NWH6327XTSA1
SMALL SIGNAL+N-CHManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS™ 2 BSS340NWH6327XTSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 880mA at 25°C (Ta), with a maximum power dissipation of 500mW (Ta). It offers a low on-resistance of 400mOhm at 880mA and 10V Vgs. The BSS340NWH6327XTSA1 utilizes advanced MOSFET technology and is housed in a PG-TO252-3 (DPAK) surface-mount package, supplied on tape and reel. With an operating temperature range of -55°C to 150°C (TJ) and AEC-Q101 qualification, this device is suitable for automotive applications. Key electrical parameters include Ciss of 41pF (max) at 15V Vds and Qg of 0.7nC (max) at 10V Vgs.
Additional Information
Series: OptiMOS™ 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 880mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1.6µA |
| Supplier Device Package | PG-TO252-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 41 pF @ 15 V |
| Qualification | AEC-Q101 |
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