BSS316NL6327HTSA1
MOSFET N-CH 30V 1.4A SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ MOSFET N-Channel BSS316NL6327HTSA1. This device features a 30V drain-source voltage and a continuous drain current of 1.4A at 25°C ambient. With a maximum Rds(on) of 160mOhm at 1.4A and 10V Vgs, it offers low conduction losses. The N-Channel FET is housed in a compact PG-SOT23 package for surface mounting. Key parameters include a gate charge of 0.6 nC at 5V and input capacitance of 94 pF at 15V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 3.7µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 94 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
