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BSS315PL6327HTSA1

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BSS315PL6327HTSA1

MOSFET P-CH 30V 1.5A SOT23-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BSS315PL6327HTSA1 is a P-Channel OptiMOS™ MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.5 A at 25°C. The Rds On is specified at a maximum of 150 mOhm at 1.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 2.3 nC maximum at 5 V and input capacitance (Ciss) of 282 pF maximum at 15 V. The device is housed in a PG-SOT23 package, commonly known as TO-236-3, SC-59, or SOT-23-3, and is supplied on Tape & Reel. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial sectors.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2V @ 11µA
Supplier Device PackagePG-SOT23
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds282 pF @ 15 V

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