BSS314PEL6327HTSA1
MOSFET P-CH 30V 1.5A SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS314PEL6327HTSA1 is a P-Channel OptiMOS™ MOSFET in a PG-SOT23 package. This device offers a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 1.5A at 25°C. The Rds(on) is specified at a maximum of 140mOhm at 1.5A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 2.9nC and Input Capacitance (Ciss) of 294pF. With a maximum power dissipation of 500mW (Ta) and an operating temperature range of -55°C to 150°C, this component is suitable for surface mount applications. Its characteristics make it applicable in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 6.3µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 294 pF @ 15 V |
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