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BSS308PEL6327HTSA1

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BSS308PEL6327HTSA1

MOSFET P-CH 30V 2A SOT23-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BSS308PEL6327HTSA1 is a P-channel OptiMOS™ MOSFET designed for surface mount applications. This component features a 30V drain-source voltage and a continuous drain current capability of 2A at 25°C. With a maximum on-resistance of 80mOhm at 2A and 10V Vgs, and a power dissipation of 500mW, it is suitable for demanding applications. The device operates within an extended temperature range of -55°C to 150°C (TJ) and is qualified to AEC-Q101 standards, making it ideal for automotive and industrial applications. Key parameters include a gate charge of 5 nC at 10V and an input capacitance of 500 pF at 15V. The BSS308PEL6327HTSA1 is supplied in a PG-SOT23 package on tape and reel.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 2A, 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2V @ 11µA
Supplier Device PackagePG-SOT23
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 15 V
QualificationAEC-Q101

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