BSS225L6327HTSA1
MOSFET N-CH 600V 90MA SOT89Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSS225L6327HTSA1, is designed for demanding applications requiring high voltage switching. This device features a Drain-to-Source Voltage (Vdss) of 600 V and offers a continuous drain current (Id) of 90mA at 25°C. With a maximum power dissipation of 1W (Ta), it is housed in a PG-SOT89 package for efficient surface mounting. Key electrical characteristics include a maximum Rds On of 45 Ohms at 90mA and 10V, and a gate charge (Qg) of 5.8 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 131 pF at 25V. Operating across an extensive temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial automation, power supply, and lighting control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 90mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
| Supplier Device Package | PG-SOT89 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 131 pF @ 25 V |
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