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BSS223PW L6327

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BSS223PW L6327

MOSFET P-CH 20V 390MA SOT323-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BSS223PW-L6327 is a P-Channel OptiMOS™ MOSFET designed for surface-mount applications. This device offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 390mA at 25°C ambient. With a maximum power dissipation of 250mW (Ta), it features a low on-resistance (Rds On) of 1.2Ohm at 390mA and 4.5V Vgs. The gate charge (Qg) is 0.62 nC at 4.5V, and input capacitance (Ciss) is 56 pF at 15V. The BSS223PW-L6327 is housed in a PG-SOT323 package and operates across a temperature range of -55°C to 150°C. It finds application in various electronic systems, including consumer electronics and industrial automation. This component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C390mA (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 390mA, 4.5V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 1.5µA
Supplier Device PackagePG-SOT323
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds56 pF @ 15 V

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