BSS215PL6327HTSA1
MOSFET P-CH 20V 1.5A SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number BSS215PL6327HTSA1, offers a 20V drain-source voltage and a continuous drain current of 1.5A at 25°C in a PG-SOT23 surface-mount package. This device features a maximum Rds(on) of 150mOhm at 1.5A and 4.5V Vgs, with a gate charge of 3.6nC at 4.5V. The input capacitance (Ciss) is 346pF maximum at 15V Vds. It supports gate-source voltages up to ±12V and has a threshold voltage (Vgs(th)) of 1.2V maximum at 11µA. With a power dissipation of 500mW and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 11µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 346 pF @ 15 V |
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