BSS214NW L6327
MOSFET N-CH 20V 1.5A SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSS214NW-L6327 is an N-Channel Power MOSFET designed for efficient switching applications. This device features a 20V drain-source breakdown voltage and can handle a continuous drain current of 1.5A at 25°C, with a maximum power dissipation of 500mW (Ta). The BSS214NW-L6327 exhibits a low on-resistance of 140mOhm at 1.5A and 4.5V gate-source voltage, facilitated by its optimized design for gate drives as low as 2.5V. Key parameters include a maximum gate charge of 0.8 nC at 5V and an input capacitance of 143pF at 10V. The component is housed in a PG-SOT323 (SC-70) surface mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics where efficient power management is critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 3.7µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 143 pF @ 10 V |
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