BSS209PW L6327
MOSFET P-CH 20V 580MA SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSS209PW-L6327 is a P-channel MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current of 580mA at 25°C. The BSS209PW-L6327 offers a maximum on-resistance (Rds On) of 550mOhm at 580mA and 4.5V gate-source voltage. Fabricated using advanced MOSFET technology, it exhibits a low gate charge of 1.38 nC at 4.5V and an input capacitance (Ciss) of 89.9 pF at 15V. The device is packaged in a compact PG-SOT323 (SC-70) surface-mount configuration, supplied on tape and reel. Its thermal capabilities include a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and power management solutions.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 580mA (Ta) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 580mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 89.9 pF @ 15 V |
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